Composition for the removing of sidewall residues

ABSTRACT

The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the production of semiconductor elements.

The present invention relates to a composition for the removal ofso-called “sidewall residues” from metal surfaces, in particular fromaluminium or aluminium-containing surfaces, during the production ofsemiconductor elements.

PRIOR ART

Conductor tracks in integrated circuits consist principally of aluminiumor an aluminium/copper alloy (0.5% of copper), which is deposited overthe entire surface by sputtering. The structures are subsequently formedby coating with photoresist, exposure and development. In the subsequentdry-etching process, the aluminium is structured, during which polymersform, inter alia, from constituents of the photoresist and the etchinggases and deposit as a continuous layer predominantly on the sidewallsof the aluminium conductor tracks. Even after removal of the photoresistby means of oxygen plasma or Caro's acid, these polymers remain on theconductor tracks. These so-called residual polymers, which are generallyknown as “sidewall residues”, have to be removed completely before theproduction process is continued in order to ensure the function andreliability of the IC component. These “sidewall residues” are referredto as residual polymers below.

In conventional methods, the residual polymers are removed by a wetcleaning step by means of a solution known as stripper or strippersolution. Conventional strippers comprise a complexing agent, acorrosion inhibitor and a polar solvent. In the product EKC 265, whichis the most frequently used, these components are hydroxylamine,monoethanolamine, catechol and water.

More recent developments have resulted in it also being possible toemploy purely inorganic strippers. For example, WO 97/36209 A1 (Merck)describes compositions based on dilute sulfuric acid/hydrogen peroxidesolutions (DSP). In U.S. Pat. Nos. 5,698,503 and 5,709,756,corresponding strippers based on ammonium fluoride solutions are used inturn.

Dilute sulfuric acid/hydrogen peroxide solutions (DSP) on their own arenot sufficient for the removal of the residual polymers and thereforecomprise additional additives. Such additives are, for example, smallamounts of hydrofluoric acid in the concentration range from 10 to 100mg/kg. The hydrofluoric acid has a slightly caustic action on aluminiumand aluminium/copper alloys. The attack takes place over the entiresurface without damaging the metallisation. Pitting corrosion, such as,for example, due to chloride ions, does not take place.

Due to the underetching, the residual polymer layer separates from themetal surface and is rinsed off by the liquid (lift-off). The metalsurface exposed by the etching operation is subsequently re-passivatedby the hydrogen peroxide.

The disadvantage in the use of hydrofluoric acid as etching additiveconsists in that the concentration must be maintained and monitored veryaccurately. An excessively high concentration would attack the metalsurface excessively, while an inadequate hydrofluoric acid concentrationdoes not achieve an adequate cleaning action.

Depending on the type of plants in which the stripper solution is to beemployed, different HF concentrations are set. On use of the strippersolution in spin etchers, strippers whose HF concentration is 100 mg/kgare usually employed. By contrast, compositions whose HF concentrationis merely 10 mg/kg are used in tank units.

In particular, the very low concentration of the solutions for use intank units makes process control very complex. The concentration mayonly differ from the nominal value by a few ppm. This aim can only beachieved by continuous, precise measurement and controlled replenishmentof hydrofluoric acid. This is only possible if the unit has on-lineanalysis and a corresponding metering system.

LITERATURE

Merck Patent W097/36209. Solution and Process for Removal of SidewallResidue after Dry Etching

Ashland. Technical Note, Fluoride-Containing Strippers

SEZ. Inorganic Chemical DSP

EP 0 773 480 A1, Remover solution composition for resist and method forremoving resist using the same

EP 0 485 161 A1, Stripping composition and method of stripping resistfrom substrates

U.S. Pat. No. 5,698,503, Stripping and cleaning composition

U.S. Pat. No. 5,709,756, Basic stripping and cleaning composition

EP 0 596 515 B1, Alkaline photoresist stripping composition producingreduced metal corrosion

OBJECT

The object of the present invention consists in providing a stablecomposition or stripper solution for the removal of residual polymers,so-called “sidewall residues”, which gives stable etching rates onaluminium or aluminium/copper alloys in a great concentration range ofthe additive, and completely removes the residual polymers describedabove without damaging the metallisation layers or conductor tracks orcausing corrosion.

The object is achieved by a composition for the production ofsemi-conductors, comprising H₂SiF₆ and/or HBF₄ in a total amount of10-500 mg/kg, 12-17% by weight of H₂SO₄, 2-4% by weight of H₂O₂,optionally in combination with additives, in aqueous solution.

The present invention thus relates to the use of a compositioncomprising H₂SiF₆ and/or HBF₄ as residual polymer remover in a processstep in the production of semiconductors, in particular for the removalof residual polymers from Al or Al-containing conductor tracks.

These compositions are preferably used for the removal of residualpolymers after dry etching on metal conductor tracks and contact holes.The present invention thus also relates to the use of this compositionfor the removal of residual polymers from aluminium or copper/aluminiumalloys, in particular the use of compositions comprising H₂SiF₆ and/orHBF₄ in a total amount of 10-500 mg/kg, 12-17% by weight of H₂SO₄, 2-4%by weight of H₂O₂, optionally in combination with additives, in aqueoussolution. These compositions are preferably used for the removal ofresidual polymers in a process step in the production of semiconductorsusing a spin etcher or in a tank unit.

In accordance with the invention, the compositions according to theinvention are used in processes for the removal of residual polymersfrom Al or Al-containing conductor tracks.

DESCRIPTION OF THE INVENTION

As described, sulfuric acid and hydrogen peroxide as well as afluorine-containing inorganic additive are the principal constituents ofa stripper. The inorganic composition most frequently employed atpresent is the above-mentioned DSP mixture consisting of sulfuric acid,hydrogen peroxide and, as additive, pure hydrofluoric acid in theconcentration range from 10 to 100 mg/kg.

If additives such as ammonium fluoride, tetramethylammonium fluoride orfluorophosphonic acid are employed instead of hydrofluoric acid, theseexhibit the same etching behaviour on aluminium, i.e. a lineardependence on the fluoride concentration present in the stripper. Alinear etching behaviour of this type as a function of the concentrationof the etching component is shown in FIG. 1. for HF, NH₄F, TMAF andH₂PO₃F. The fact that the etching rates of all these additives are on astraight line in a graph suggests that the fluoride component in theacidic solution is converted completely into HF.

The etching behaviour of the fluorine compounds hexafluorosilicic acidand tetrafluoroboric acid, by contrast, is completely different, asexperiments have shown. Although the etching rates initially increasewith the concentration, they remain, however, virtually constant as theconcentration is increased further. This behaviour is also shown in thegraph in FIG. 1.

Although it is generally understood that hexafluorosilicic acid andtetrafluoroboric acid are strong acids, experiments have now shown thattheir use instead of the above-mentioned additives can advantageouslyaffect the behaviour of stripper solutions. Even if these components areadded in relatively small amounts, this positive effect is very clearlyevident. However, it is not only the etching rates that can beadvantageously affected by the addition of hexafluorosilicic acid and/ortetrafluoroboric acid; at the same time, passivation of the surfaces ofthe conductor tracks consisting of aluminium or aluminium alloys againstcorrosion is thereby achieved.

The “double” inhibitor action of these compounds enables this processstep, which is necessary for the removal of residual polymers, to becarried out over a longer period and in a much greater concentrationrange with a constant stripper action.

Continuous measurement of the additive content and replenishment duringthe production process thus becomes superfluous. Equipment costs arethus saved and at the same time greater process safety is achieved.

Through the use of hexafluorosilicic acid and/or tetrafluoroboric acidin the composition in concentrations of from 100 to 500 mg/kg, residualpolymers are removed with very good results, which can be confirmed bySEM studies. At the same time, no attack of the aluminium or aluminiumalloys is evident in the said concentration range. The advantageousaction of the hexafluorosilicic acid is evident in direct comparisonwith HF as additive. HF exhibits significant surface etching from only100 mg/kg (see FIG. 3, picture 5).

The experiments are carried out using structured wafers having thefollowing layer structure: SiO2 (thermal oxide substrate) titaniumsputtered 100 nm aluminium sputtered (0.5% of Cu) 900 nm TiN sputtered100 nm

The aluminium conductor tracks are structured by coating withphotoresist, exposure and subsequent development and curing of theresist by UV irradiation.

The wafers are then etched in the etching chamber in an LAM TCP 9600with Cl₂/BCl₃ and N₂ as etching gases.

The photoresist layer is removed by O₂/H₂O plasma treatment in thestripping chamber, followed by treatment with warm water in a furtherchamber for the removal of chlorine (corrosion prevention).

The process for the removal of residual polymers after dry etching, i.e.the stripping process, is firstly developed in beaker experiments underreproducible conditions in accordance with DIN 50453. The process issubsequently transferred to an SEZ spin etcher and a Mattson AWP200 tankunit with the following process parameters: SEZ spin etcher Mattson AWP200 Etching: 45-60 s at 25° C. 45-90 s at 25° C. Rinsing with 30 s at RT10 min. at RT ultrapure water: Drying: N₂ Marangoni

The first experiments are carried out using a composition whichcorresponds to the DSP mixture currently being used, an aqueous solutionof sulfuric acid with a concentration in the range between 12 to 17% byweight and hydrogen peroxide in a concentration in the range from 2 to4% by weight. Use is made of H₂SiF₆ and HBF₄ individually here, but alsoof the combination of the two compounds as fluoride ion suppliers.

These experiments show that the addition of the individual fluoride ionsuppliers H₂SiF₆ and HBF₄, but also in combination with one another,enables good removal of residual polymers to be achieved, with betterpassivation being caused by H₂SiF₆. Owing to this experimental resultand owing to its better handling properties, the use of H₂SiF₆ istherefore to be preferred.

Solutions which are suitable per se for the removal of residual polymersafter dry etching are those which comprise H₂SO₄ in a concentration inthe range from 1 to 17% by weight. Particularly good results areachieved with compositions comprising from 12 to 17% by weight of H₂SO₄.

Compositions comprising H₂O₂ in the concentration range between 1 to 12%by weight have proven suitable for the removal of residual polymers.Preference is given to the use of compositions which comprise H₂O₂ in aconcentration in the range from 2 to 4% by weight.

In these concentration ranges, the etching rates on aluminium arevirtually constant and are determined only by the content of theadditive. FIG. 2 shows the dependence of the etching rates on aluminiumat a constant content of H₂SiF₆ of 500 mg/kg.

Particularly suitable compositions have proven to be those whichcomprise from 12 to 17% by weight of H₂SO₄, from 2 to 4% by weight ofH₂O₂ and from 100 to 500 mg/kg of H₂SiF₆. Preference is given tocorresponding composition in which the fluoride supplier is H₂SiF₆ incombination with HBF₄ and their total amount of the two compounds isfrom 100 to 500 mg/kg. A further preferred embodiment of the inventioncomprises compositions which comprise HBF₄ as the onlyfluorine-containing compound in an amount of from 100 to 500 mg/kg.

Experiments have shown that corresponding compositions are particularlysuitable for the removal of residual polymers after dry etching on metalconductor tracks.

These aqueous compositions are particularly suitable for the removal ofresidual polymers from aluminium without attacking the metal.

Whereas the HF content in the DSP mixtures employed hitherto asstrippers with pure HF as additive drops continuously compared with thecompositions according to the invention if the process is carried outcontinuously, adversely affecting the cleaning action, consumed HFappears to be replenished continuously by H₂SiF₆ or HBF₄ as effectiveadditive in an equilibrium reaction, so that the desired concentrationapparently remains constant over an extended period. A solutionstabilised in this way firstly enables the process safety to besignificantly improved and secondly enables costs to be saved sincethere is no need for a technically complex on-line monitoring andmetering system. Furthermore, the fluoride ion suppliers according tothe invention are significantly less corrosive than pure HF solutions,both with respect to storage containers used and to the productionplants, meaning that the fluoride ion suppliers according to theinvention also contribute a considerable contribution towards processsafety in this respect.

Examples are given below for illustrative purposes and for betterunderstanding of the invention. Owing to the general validity of thepresent invention in the limits described, these examples are notsuitable for restricting the invention merely to the values given in theexamples.

EXAMPLES Example 1

Etched wafers having the layer structure described above were processedin the SEZ spin etcher. This technology is a single-wafer process inwhich the wafer lying horizontally in a process chamber is set inrotation and impinged on by the etching liquid via a nozzle. In theprocess, the nozzle arm moves horizontally to and fro over the wafersurface. The etching process is followed by a rinsing process withultrapure water in accordance with the same principle. For drying, thewafer is finally blown dry with N₂ at a high rotational speed.

Step 1: Stripping

Composition of the mixture: Sulfuric acid: 12.0% by weight Hydrogenperoxide:  2.4% by weight H2SiF6: 500 mg/kg

600 rpm, 1 l/min through-flow, 25° C., 30 sec.

Step 2: Rinsing with Ultrapure Water

600 rpm, 1 l/min through-flow, 25° C., 30 sec.

Step 3: Spin Drying with Blowing off by N2

2000 rpm, 150 l/min.

FIG. 3 shows the fully cleaned surface, without attack of themetallisation. At concentrations above 500 mg/kg of H2SiF6, themetallisation is surface etched, see FIG. 3, picture 4 with 1000 mg/kg.

Example 2

The same wafers as in Example 1 were processed in a Mattson AWP200 tankunit.

Step 1: Stripping

Composition of the mixture: Sulfuric acid: 12.0% by weight Hydrogenperoxide:  2.4% by weight H2SiF6: 100 mg/kg

15 l/min. recirculation, 25 ° C., 45 s

Step 2: Rinsing with Ultrapure Water

35 l/min through-flow, 25° C., 10 min.

Step 3: Marangoni Dryer

FIG. 3 shows the fully cleaned surface, without attack on themetallisation.

Example 3

The same wafers as in Example 1 were processed in a beaker. For bettercharacterisation of the stripping process, wafers with very thickpolymer layers were used.

Step 1: Stripping

Composition of the mixture: Sulfuric acid:  12% by weight Hydrogenperoxide: 2.4% by weight H₂SiF₆: 100 mg/kg Oenanthic acid:  80 mg/kg

100 rpm. 25° C., 60 sec.

Step 2: Rinsing with Ultrapure Water in the Beaker

25° C., 5 min.

Step 3: Drying in the Nitrogen Oven

100° C., 10 min

It can be seen in FIG. 12 that the polymers have been removed apart froma thin residual layer.

Comparative Example for Example 3

As reference, an identical wafer with the same composition, but withoutadded surfactant was processed as above.

In FIG. 13, a significantly thicker polymer layer is evident.

The added surfactant thus wets the surface better, which has a positiveeffect on the stripping action.

The SEM photographs shown in the annex show the results of the removalof residual polymers using the compositions according to the invention.The results were achieved by stripping in an SEZ spin etcher usingvarious H₂SiF₆ concentrations:

FIG. 3 shows a section of a wafer with aluminium conductor tracks beforethe treatment.

FIG. 4 shows a corresponding wafer section after stripping with acomposition comprising 100 ppm of H₂SiF₆, FIG. 5 with 500 ppm of H₂SiF₆,FIG. 6 with 1000 ppm of H₂SiF₆. FIGS. 4 to 6 show residual polymer-freeconductor tracks. By comparison, FIGS. 7-9 show results obtained underthe same conditions, but using various HF concentrations: FIG. 7 100 ppmof HF, FIG. 8 200 ppm of HF and FIG. 9 500 ppm of HF. On use of 100 ppmof HF, polymer residues and surface etching are still evident. Althoughthe use of 200 ppm of HF results in virtually complete removal of theresidual polymers, it also results in an increase in surface etchingcompared with the use of 100 ppm of HF. On use of compositionscomprising 500 ppm of HF, very strong surface etching of the metalconductor tracks is found. FIGS. 10 and 11 show results obtained by theremoval of residual polymers in a Mattson AWP tank processor: FIG. 10using 100 ppm of H₂SiF₆ and FIG. 11 using 600 ppm of H₂SiF₆. In thesecases too, very good removal of residual polymers is found, with thesurface etching remaining in acceptable limits even at 600 ppm.

FIG. 12 shows conductor tracks after treatment with a stripper solutioncomprising 12% by weight of H₂SO₄, 2.4% by weight of H₂O₂, 100 ppm ofH₂SiF₆ and added surfactant. By comparison, FIG. 13 shows conductortracks after treatment with a corresponding stripper solution as in FIG.12, but without added surfactant.

1. Composition for the production of semiconductors, comprising H₂SiF₆and/or HBF₄ in a total amount of 10-500 mg/kg, 12-17% by weight ofH₂SO₄, 2-4% by weight of H₂O₂, optionally in combination with additives,in aqueous solution.
 2. Use of a composition comprising H₂SiF₆ and/orHBF₄ as residual polymer remover in a process step in the production ofsemiconductors.
 3. Use according to claim 2 for the removal of residualpolymers from Al or Al-containing conductor tracks.
 4. Use according toclaim 2 for the removal of residual polymers after dry etching on metalconductor tracks and contact holes.
 5. Use of a composition according toclaim 1 for the removal of residual polymers from aluminium orcopper/aluminium alloys.
 6. Use of a composition comprising H₂SiF₆and/or HBF₄ in a total amount of 10-500 mg/kg, 12-17% by weight ofH₂SO₄, 2-4% by weight of H₂O₂, optionally in combination with additives,in aqueous solution, according to claim
 2. 7. Use according to claim 2for the removal of residual polymers in a process step in the productionof semiconductors using a spin etcher or in a tank unit.
 8. Process forthe removal of residual polymers from Al or Al-containing conductortracks, characterised in that residual polymers are removed using acomposition according to claim 1.